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1

AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

Y. Cordier, M. Azize, N. Baron, S. Chenot, O. Tottereau, J. Massies

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 585 KB

english, 2007

2

Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates

Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, T. Chassagne

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 158 KB

english, 2008

3

Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates

Cordier, Yvon, Portail, Marc, Chenot, Sébastien, Tottereau, Olivier, Zielinski, Marcin, Chassagne, Thierry

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 1.99 MB

english, 2009

4

Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates

Cordier, Yvon, Portail, Marc, Chenot, Sébastien, Tottereau, Olivier, Zielinski, Marcin, Chassagne, Thierry

Journal:

MRS Proceedings

Year:

2008

Language:

english

File:

PDF, 1.27 MB

english, 2008

5

Study of (Al,Ga)N Bragg Mirrors Grown on Al2O3(0001) and Si(111) by Metalorganic Vapor Phase Epitaxy

H.P.D. Schenk, E. Feltin, P. Vennéguès, O. Tottereau, M. Laügt, M. Vaille, B. Beaumont, P. de Mierry, P. Gibart, S. Fernández, F. Calle

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 129 KB

english, 2001

6

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Y. Cordier, F. Semond, J-C. Moreno, E. Frayssinet, B. Benbakhti, Z. Cao, S. Chenot, L. Nguyen, O. Tottereau, A. Soltani, K. Blary

Journal:

Materials Science in Semiconductor Processing

Year:

2009

Language:

english

File:

PDF, 526 KB

english, 2009

7

AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(1 1 1)

Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennegues, J. Massies

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 216 KB

english, 2005

8

Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes

F. Tinjod, P. de Mierry, D. Lancefield, Z. Bougrioua, S. Laügt, O. Tottereau, P. Lorenzini, S. Chenot, E. Virey, M.R. Kokta, J.L. Stone-Sundberg, D. Pauwels

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 440 KB

english, 2005

9

Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures

Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, S. Chenot, O. Tottereau, J. Massies, P. Gibart

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 394 KB

english, 2008

10

AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(1 1 1)

Yvon Cordier, Marc Portail, Sébastien Chenot, Olivier Tottereau, Marcin Zielinski, Thierry Chassagne

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 969 KB

english, 2008

11

Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature

Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 420 KB

english, 2009

12

Heteroepitaxial growth of thin InAs layers on GaAs(1 0 0) misoriented substrates: A structural and morphological comparison

H. Ben Naceur, I. Moussa, O. Tottereau, A. Rebey, B. El Jani

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2009

Language:

english

File:

PDF, 474 KB

english, 2009

13

Structural and electronic properties of ZnMgO/ZnO quantum wells

C. Morhain, X. Tang, M. Teisseire-Doninelli, B. Lo, M. Laügt, J.-M. Chauveau, B. Vinter, O. Tottereau, P. Vennéguès, C. Deparis, G. Neu

Journal:

Superlattices and Microstructures

Year:

2005

Language:

english

File:

PDF, 2.02 MB

english, 2005

14

Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC

Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio, H. Moriceau

Journal:

Superlattices and Microstructures

Year:

2006

Language:

english

File:

PDF, 361 KB

english, 2006

15

AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy

S. Joblot, Y. Cordier, F. Semond, S. Chenot, P. Vennéguès, O. Tottereau, P. Lorenzini, J. Massies

Journal:

Superlattices and Microstructures

Year:

2006

Language:

english

File:

PDF, 353 KB

english, 2006

16

Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (1 1 1)

H Lahrèche, P Vennéguès, O Tottereau, M Laügt, P Lorenzini, M Leroux, B Beaumont, P Gibart

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 1.15 MB

english, 2000

17

Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy

H.P.D. Schenk, P. Vennéguès, O. Tottereau, T. Riemann, J. Christen

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 888 KB

english, 2003

18

Silicon effect on GaN surface morphology

Z Benzarti, I Halidou, O Tottereau, T Boufaden, B El Jani

Journal:

Microelectronics Journal

Year:

2002

Language:

english

File:

PDF, 529 KB

english, 2002

19

Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates

Yvon Cordier, Sébastien Chenot, Marguerite Laügt, Olivier Tottereau, Sylvain Joblot, Fabrice Semond, Jean Massies, Léa Di Cioccio, Hubert Moriceau

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 198 KB

english, 2007

20

Growth of GaN based structures on focused ion beam patterned templates

Y. Cordier, O. Tottereau, L. Nguyen, M. Ramdani, A. Soltani, M. Boucherit, D. Troadec, F.-Y. Lo, Y. Y. Hu, A. Ludwig, A. D. Wieck

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 782 KB

english, 2011

21

X-ray and transmission electron microscopy characterization of twinned CdO thin films grown ona-plane sapphire by metalorganic vapour phase epitaxy

M.C. Martínez-Tomás, J. Zúñiga-Pérez, P. Vennéguès, O. Tottereau, V. Muñoz-Sanjosé

Journal:

Applied Physics A: Materials Science & Processing

Year:

2007

Language:

english

File:

PDF, 334 KB

english, 2007

22

Imaging and counting threading dislocations in c-oriented epitaxial GaN layers

Khoury, M, Courville, A, Poulet, B, Teisseire, M, Beraudo, E, Rashid, M J, Frayssinet, E, Damilano, B, Semond, F, Tottereau, O, Vennéguès, P

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 1.69 MB

english, 2013

23

In situ growth monitoring of distributed GaNâAlGaN Bragg reflectors by metalorganic vapor phase epitaxy

Schenk, H. P. D., de Mierry, P., VenneÌgueÌs, P., Tottereau, O., LauÌgt, M., Vaille, M., Feltin, E., Beaumont, B., Gibart, P., FernaÌndez, S., Calle, F.

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 305 KB

english, 2002

24

On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

Alloing, B., VeÌzian, S., Tottereau, O., VenneÌgueÌs, P., Beraudo, E., Zuniga-PeÌrez, J.

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 858 KB

english, 2011

25

GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get high luminescence efficiency in the near ultraviolet range

Kahouli, A., Kriouche, N., Brault, J., Damilano, B., VenneÌgueÌs, P., de Mierry, P., Leroux, M., Courville, A., Tottereau, O., Massies, J.

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 2.10 MB

english, 2011

26

Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)NâGaN heterostructures

VenneÌgueÌs, P., Bougrioua, Z., Bethoux, J. M., Azize, M., Tottereau, O.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 1.14 MB

english, 2005

27

Fabrication and growth of GaN-based micro and nanostructures

Alloing, Blandine, Beraudo, Emmanuel, Cordier, Yvon, Semond, Fabrice, Sergent, Sylvain, Tottereau, Olivier, Venné, P., guè, N.A., s, N.A., Sté, N.A., Vé, phane, zian, N.A., Jesú, N.A., Zú, s, ñ, N.A.,

Journal:

International Journal of Nanotechnology

Year:

2012

Language:

english

File:

PDF, 1.63 MB

english, 2012

28

Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)

Natali, F., Semond, F., Massies, J., Byrne, D., Laügt, S., Tottereau, O., Vennéguès, P., Dogheche, E., Dumont, E.

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 460 KB

english, 2003

29

Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

Bethoux, J.-M., Vennéguès, P., Natali, F., Feltin, E., Tottereau, O., Nataf, G., De Mierry, P., Semond, F.

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 1005 KB

english, 2003

30

Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots

Benaissa, M., Vennéguès, P., Tottereau, O., Nguyen, L., Semond, F.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 505 KB

english, 2006

31

Effect of TMBi supply on low-temperature MOVPE growth behavior of GaN

Saidi, C., Chaaben, N., Laifi, J., Sekrafi, T., Tottereau, O., Bchetnia, A., El Jani, B.

Journal:

Journal of Alloys and Compounds

Year:

2015

Language:

english

File:

PDF, 2.03 MB

english, 2015

32

Surface segregation in (Ga,In)As/GaAs quantum boxes

Grandjean, N., Massies, J., Tottereau, O.

Journal:

Physical Review B

Year:

1997

Language:

english

File:

PDF, 449 KB

english, 1997

33

The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

N. Baron, Y. Cordier, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies

Year:

2009

Language:

english

File:

PDF, 1.17 MB

english, 2009

34

Realization of waveguiding epitaxial GaN layers on Si by low-pressure metalorganic vapor phase epitaxy

Schenk, H. P. D., Feltin, E., Laügt, M., Tottereau, O., Vennéguès, P., Doghèche, E.

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 357 KB

english, 2003

35

Study of the growth mechanisms of GaN/(Al, Ga)N quantum dots: Correlation between structural and optical properties

Sergent, S., Damilano, B., Huault, T., Brault, J., Korytov, M., Tottereau, O., Vennéguès, P., Leroux, M., Semond, F., Massies, J.

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 2.07 MB

english, 2011

36

Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy

Tournié, E., Pinault, M.-A., Vézian, S., Massies, J., Tottereau, O.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 286 KB

english, 2000

37

High Quality GaN on Si(111) using (AlN/GaN)x Superlattice and Maskless ELO

Lahrèche, H., Bousquet, V., Laügt, M., Tottereau, Olivier, Vennéguès, P., Beaumont, B., Gibart, Pierre

Journal:

Materials Science Forum

Year:

2000

File:

PDF, 337 KB

2000

38

Full Si Wafer Conversion into Bulk 3C-SiC

Leycuras, André, Tottereau, Olivier, Vicente, Patrice, Falkovsky, L.A., Girard, P., Camassel, Jean

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 406 KB

2002

39

Microstructure of GaN Grown on (1120) Sapphire

Ruterana, P., Wickenden, A. E., Twigg, M. E., Koleske, D.D., Henry, R. L., Tottereau, O.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 1.02 MB

english, 2000

40

Investigation of Al y Ga 1− y N/Al 0.5 Ga 0.5 N quantum dot properties for the design of ultraviolet emitters

Brault, Julien, Matta, Samuel, Ngo, Thi-Huong, Korytov, Maxim, Rosales, Daniel, Damilano, Benjamin, Leroux, Mathieu, Vennéguès, Philippe, Al Khalfioui, Mohamed, Courville, Aimeric, Tottereau, Olivier,

Journal:

Japanese Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 1.10 MB

english, 2016

41

Ion-induced interdiffusion of surface GaN quantum dots

Rothfuchs, Charlotte, Semond, Fabrice, Portail, Marc, Tottereau, Olivier, Courville, Aimeric, Wieck, Andreas D., Ludwig, Arne

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2017

Language:

english

File:

PDF, 1.34 MB

english, 2017

42

Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates

Khoury, Michel, Tottereau, Olivier, Feuillet, Guy, Vennéguès, Philippe, Zúñiga-Pérez, Jesus

Journal:

Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 1.78 MB

english, 2017

43

Impact of sapphire nitridation on formation of Al-polar inversion domains in N-polar AlN epitaxial layers

Stolyarchuk, N., Markurt, T., Courville, A., March, K., Tottereau, O., Vennéguès, P., Albrecht, M.

Journal:

Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 2.37 MB

english, 2017

44

Impact-induced chemical fractionation as inferred from hypervelocity impact experiments with silicate projectiles and metallic targets

Ganino, Clément, Libourel, Guy, Nakamura, Akiko M., Jacomet, Suzanne, Tottereau, Olivier, Michel, Patrick

Journal:

Meteoritics and Planetary Science

Year:

2018

Language:

english

File:

PDF, 1.40 MB

english, 2018

45

Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon

Cordier, Yvon, Comyn, Rémi, Tottereau, Olivier, Frayssinet, Eric, Portail, Marc, Nemoz, Maud

Journal:

Journal of Crystal Growth

Year:

2019

Language:

english

File:

PDF, 1.66 MB

english, 2019

46

Comparative Study of 1.3 and 1.5 m Light-Emitting Diodes GaAs-Based InAs/InGaAs and InAs/(Ga, In) (N, As) Self-Assembled Quantum Dots

Niasse, O.A., Ba, B., Ndiaye, A., Mbaye, F., Lo, A., Beye, A., Tottereau, O.

Journal:

Research Journal of Applied Sciences, Engineering and Technology `

Year:

2013

Language:

english

File:

PDF, 1.20 MB

english, 2013

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